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IEEE Std P3465/D3, Oct 2026

IEEE Std P3465/D3, Oct 2026 是电气电子工程师学会的草案,题为“IEEE Draft Standard for Magnetic Field Immunity Verification of Magnetoresistive Random Access Memory”;公开目录标为现行(Active),著录年份为 2026 年。

Aggiornato · rev 1 · Altri nomi:P3465/D3, Oct 2026 P3465/D3, Oct 2026 - IEEE Draft Standard for Magnetic Field Immunity Verification of Magnetoresistive Random Access Memory

IEEE Std P3465/D3, Oct 2026(IEEE Draft Standard for Magnetic Field Immunity Verification of Magnetoresistive Random Access Memory)是电气电子工程师学会于 2026 年 10 月形成的草案。公开目录将其标为现行(Active),主题领域包括 Computing and Processing、Fields, Waves and Electromagnetics、Transportation[1]。参见IEEE 标准。

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  1. IEEE Std P3465/D3, Oct 2026 — IEEE Xplore 题录 · IEEE

    standard_number=P3465/D3, Oct 2026; status=Active; modifier=Draft

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  2. IEEE Xplore All Standards(KBART) · IEEE · 2026-11-01 ↩